(Invited) Photo-Assisted ALD: Process Development and Application Perspectives
نویسندگان
چکیده
منابع مشابه
Volatile Guanidinato-based Metalorganic Precursors for Ald Process
Film properties of TaN-based metal (TaCN and TaSiN) have been precisely controlled for plasma enhanced ALD (PEALD) and thermal ALD with additives of N2 or NH3. Film resistivity (ρ) strongly depended on the nitrogen concentration of TaN-based metal. These films showed conformal step-coverage for high-aspect (>6) 50nm-wide trenches. Consequently, ALD TaN-based metal is promising for microelectron...
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ژورنال
عنوان ژورنال: ECS Transactions
سال: 2017
ISSN: 1938-6737,1938-5862
DOI: 10.1149/08003.0049ecst